TY - JOUR
T1 - Mixed-Signal Building Blocks for Communication Systems Using Flexible Oxide TFT Technology
AU - Tiwari, Bhawna
AU - Bahubalindruni, Pydi Ganga
AU - Shrivastava, Suyash
AU - Goes, João Carlos da Palma
N1 - The authors would like to thank the Semi-Conductor Laboratory (SCL), Department of Space, Government of India, Sector 72, Mohali, India, for the dicing service.
PY - 2022/10
Y1 - 2022/10
N2 - This article reports two important mixed-signal building blocks using unipolar oxide thin-film transistors (TFTs) on a 30- μm -thick polymide substrate, which find potential application in communication systems. These blocks include a low-voltage bootstrapped (BS) switch and a latch-type comparator designed using a device channel length of 2 μm . Functional demonstration of these blocks has been carried out from measurements under normal ambient conditions with a load of 10 MΩ||12 pF at a supply voltage ( VDD ) not exceeding 3 V. While the BS switch shows a linear ON-resistance of 40 kΩ , at a VDD of 2 V, without any voltage drop across it, the proposed comparator has shown a very low offset of 10 mV with a decision time of 4 μs . These blocks help in expanding the application of oxide TFT technology in communication systems to design the binary amplitude-shift keying (BASK) modulator and demodulator circuits.
AB - This article reports two important mixed-signal building blocks using unipolar oxide thin-film transistors (TFTs) on a 30- μm -thick polymide substrate, which find potential application in communication systems. These blocks include a low-voltage bootstrapped (BS) switch and a latch-type comparator designed using a device channel length of 2 μm . Functional demonstration of these blocks has been carried out from measurements under normal ambient conditions with a load of 10 MΩ||12 pF at a supply voltage ( VDD ) not exceeding 3 V. While the BS switch shows a linear ON-resistance of 40 kΩ , at a VDD of 2 V, without any voltage drop across it, the proposed comparator has shown a very low offset of 10 mV with a decision time of 4 μs . These blocks help in expanding the application of oxide TFT technology in communication systems to design the binary amplitude-shift keying (BASK) modulator and demodulator circuits.
U2 - 10.1109/JFLEX.2022.3220719
DO - 10.1109/JFLEX.2022.3220719
M3 - Article
SN - 2768-167X
VL - 1
JO - IEEE Journal on Flexible Electronics
JF - IEEE Journal on Flexible Electronics
IS - 4
ER -