TY - JOUR
T1 - MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AU - Águas, Hugo Manuel Brito
AU - Pereira, Luis Miguel Nunes
AU - Raniero, Leandro
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/1/1
Y1 - 2004/1/1
N2 - This work presents a comparative study between MIS photodiodes produced using high quality amorphous silicon (a-Si:H), deposited by PECVD at 2Angstrom/s, using 13.56 MHz frequency and polymorphous silicon (pm-Si) deposited at 3Angstrom/s using a 27.12 MHz frequency. The results show that the pm-Si:H outperforms the a-Si:H MIS photodiodes by having a rectification ratio of 10(7), and photosensitivity at AM1.5 conditions of 10(7), Under 1V reverse bias. Apart from that, the pm-Si:H photodiode presents a higher open circuit voltage and better fill factor than a-Si:H MIS photodiode. These results prove that quality devices can be produced at high growth rates by using pm-Si:H. In this work the photodiode performances were correlated to the films properties, aiming to determine the characteristics responsible for the performances exhibited by the pm-Si:H devices.
AB - This work presents a comparative study between MIS photodiodes produced using high quality amorphous silicon (a-Si:H), deposited by PECVD at 2Angstrom/s, using 13.56 MHz frequency and polymorphous silicon (pm-Si) deposited at 3Angstrom/s using a 27.12 MHz frequency. The results show that the pm-Si:H outperforms the a-Si:H MIS photodiodes by having a rectification ratio of 10(7), and photosensitivity at AM1.5 conditions of 10(7), Under 1V reverse bias. Apart from that, the pm-Si:H photodiode presents a higher open circuit voltage and better fill factor than a-Si:H MIS photodiode. These results prove that quality devices can be produced at high growth rates by using pm-Si:H. In this work the photodiode performances were correlated to the films properties, aiming to determine the characteristics responsible for the performances exhibited by the pm-Si:H devices.
U2 - 10.4028/www.scientific.net/MSF.455-456.73
DO - 10.4028/www.scientific.net/MSF.455-456.73
M3 - Article
SN - 0255-5476
VL - 455-456
SP - 73
EP - 76
JO - Advanced Materials Forum Iii, Pts 1 And 2
JF - Advanced Materials Forum Iii, Pts 1 And 2
IS - NA
ER -