Metal oxide/silicon heterostructures: New solutions for different optoelectronic applications

A. Malik, R. Martins

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5 V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e- RMS.); 2. Fast-response surface-barrier FTO/n--n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the `critical fluence' value (3×1014 cm-2) for neutron irradiation.

Original languageEnglish
Pages (from-to)375-380
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume487
Publication statusPublished - 1998
Event1998 MRS Fall Symposium - Boston, United States
Duration: 1 Dec 19975 Dec 1997

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