TY - JOUR
T1 - Metal induced crystallization: Gold versus aluminium
AU - Pereira, Luis Miguel Nunes
AU - Águas, Hugo Manuel Brito
AU - Vilarinho, Paula
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2005/3
Y1 - 2005/3
N2 - In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500◦C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500◦C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium.
AB - In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500◦C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500◦C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium.
U2 - 10.1007/s10853-005-0571-5
DO - 10.1007/s10853-005-0571-5
M3 - Article
SN - 0022-2461
VL - 40
SP - 1387
EP - 1391
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 6
ER -