Metal induced crystallization: Gold versus aluminium

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Abstract

In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500◦C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500◦C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium.
Original languageEnglish
Pages (from-to)1387-1391
Number of pages5
JournalJournal of Materials Science
Volume40
Issue number6
DOIs
Publication statusPublished - Mar 2005

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