Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

Luis Miguel Nunes Pereira; Hugo Aguas; Manfred Beckers; Rui M. S. Martins; E. Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.jnoncrysol.2007.09.027

Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

Luis Miguel Nunes Pereira, Hugo Aguas, Manfred Beckers, Rui M. S. Martins, E. Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Abstract

In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS.

Original language	English
Title of host publication	JOURNAL OF NON-CRYSTALLINE SOLIDS
Pages	2319-2323
Number of pages	5
Volume	354
DOIs	https://doi.org/10.1016/j.jnoncrysol.2007.09.027
Publication status	Published - 1 May 2008
Event	22nd International Conference on Amorphous and Nanocrystalline Semiconductors - Duration: 1 Jan 2007 → …

Conference

Conference	22nd International Conference on Amorphous and Nanocrystalline Semiconductors
Period	1/01/07 → …

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10.1016/j.jnoncrysol.2007.09.027

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@inproceedings{792296e309864a8c9cfe5085a289157c,

title = "Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry",

abstract = "In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS.",

keywords = "spectroscopic ellipsometry, Rutherford backscattering, poly-Si",

author = "Pereira, {Luis Miguel Nunes} and Hugo Aguas and Manfred Beckers and Martins, {Rui M. S.} and E. Fortunato and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2008",

month = may,

day = "1",

doi = "10.1016/j.jnoncrysol.2007.09.027",

language = "English",

volume = "354",

pages = "2319--2323",

booktitle = "JOURNAL OF NON-CRYSTALLINE SOLIDS",

note = "22nd International Conference on Amorphous and Nanocrystalline Semiconductors ; Conference date: 01-01-2007",

}

Pereira, LMN , Aguas, H, Beckers, M, Martins, RMS, Fortunato, E & Martins, RFDP 2008, Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry. in JOURNAL OF NON-CRYSTALLINE SOLIDS. vol. 354, pp. 2319-2323, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, 1/01/07. https://doi.org/10.1016/j.jnoncrysol.2007.09.027

TY - GEN

T1 - Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

AU - Pereira, Luis Miguel Nunes

AU - Aguas, Hugo

AU - Beckers, Manfred

AU - Martins, Rui M. S.

AU - Fortunato, E.

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2008/5/1

Y1 - 2008/5/1

N2 - In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS.

AB - In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS.

KW - spectroscopic ellipsometry

KW - Rutherford backscattering

KW - poly-Si

U2 - 10.1016/j.jnoncrysol.2007.09.027

DO - 10.1016/j.jnoncrysol.2007.09.027

M3 - Conference contribution

VL - 354

SP - 2319

EP - 2323

BT - JOURNAL OF NON-CRYSTALLINE SOLIDS

T2 - 22nd International Conference on Amorphous and Nanocrystalline Semiconductors

Y2 - 1 January 2007

ER -

Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

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