Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins

doi:10.1063/1.3525932

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 degrees C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm(2)/V s.

Original language	Unknown
Pages (from-to)	nr. 243506
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3525932
Publication status	Published - 1 Jan 2010

Access to Document

10.1063/1.3525932

Cite this

@article{0a640772b6db4a389a38beabf03942b9,

title = "Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films",

abstract = "We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 degrees C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm(2)/V s.",

author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2010",

month = jan,

day = "1",

doi = "10.1063/1.3525932",

language = "Unknown",

volume = "97",

pages = "nr. 243506",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP - American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 degrees C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm(2)/V s.

AB - We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 degrees C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm(2)/V s.

U2 - 10.1063/1.3525932

DO - 10.1063/1.3525932

M3 - Article

SN - 0003-6951

VL - 97

SP - nr. 243506

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -