Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs

Suprateek Shukla; Bhawna Tiwari; Nishtha Wadhwa; Pydi Ganga Bahubalindruni; Pedro Barquinha

doi:10.1007/978-981-13-5950-7_32

Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs

Suprateek Shukla, Bhawna Tiwari, Nishtha Wadhwa, Pydi Ganga Bahubalindruni, Pedro Barquinha

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This paper proposes a novel low-power operational amplifier (OPAMP) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). By introducing dynamic operation, power consumption of the proposed OPAMP has been significantly reduced without compromising with other design parameters like gain, slew rate etc. In addition, common mode feedback (CMFB) and internal frequency compensation have been used to ensure good common mode rejection ratio (CMRR) and stability of the OPAMP, respectively. In order to demonstrate the proposed idea, low power OPAMP is designed and simulated using in-house a-IGZO TFT model in Cadence Virtuoso. Circuit simulations have been carried out at a supply voltage and device channel length of 10 V and 20 m, respectively. From simulations, a gain of 30 dB and unity gain bandwidth of 106.8 kHz with a phase margin of 63 were noticed. The power consumed by the proposed OPAMP is 146.8 W, which is significantly lower compared to the OPAMPs implemented with various TFT technologies. The proposed OPAMP circuit would find potential applications in various real-world large area applications that need flexible electronics with low-power consumption like bio-medical and wearable devices.

Original language	English
Title of host publication	VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers
Editors	S. Rajaram, N.B. Balamurugan, D. Gracia Nirmala Rani, Virendra Singh
Place of Publication	Singapore
Publisher	Springer
Pages	370-379
Number of pages	10
ISBN (Electronic)	978-981-13-5950-7
ISBN (Print)	978-981-13-5949-1
DOIs	https://doi.org/10.1007/978-981-13-5950-7_32
Publication status	Published - 2019
Event	22nd International Symposium on VLSI Design and Test, VDAT 2018 - Madurai, India Duration: 28 Jun 2018 → 30 Jun 2018

Publication series

Name	Communications in Computer and Information Science
Publisher	Springer
Volume	892
ISSN (Print)	1865-0929
ISSN (Electronic)	1865-0937

Conference

Conference	22nd International Symposium on VLSI Design and Test, VDAT 2018
Country/Territory	India
City	Madurai
Period	28/06/18 → 30/06/18

Keywords

a-IGZO TFT
CMFB
CMRR
Low-power design
OPAMP
TFT

Access to Document

10.1007/978-981-13-5950-7_32

Cite this

Shukla, S., Tiwari, B., Wadhwa, N., Bahubalindruni, P. G., & Barquinha, P. (2019). Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs. In S. Rajaram, N. B. Balamurugan, D. Gracia Nirmala Rani, & V. Singh (Eds.), VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers (pp. 370-379). (Communications in Computer and Information Science; Vol. 892). Springer. https://doi.org/10.1007/978-981-13-5950-7_32

Shukla, Suprateek ; Tiwari, Bhawna ; Wadhwa, Nishtha et al. / Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs. VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers. editor / S. Rajaram ; N.B. Balamurugan ; D. Gracia Nirmala Rani ; Virendra Singh. Singapore : Springer, 2019. pp. 370-379 (Communications in Computer and Information Science).

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title = "Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs",

abstract = "This paper proposes a novel low-power operational amplifier (OPAMP) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). By introducing dynamic operation, power consumption of the proposed OPAMP has been significantly reduced without compromising with other design parameters like gain, slew rate etc. In addition, common mode feedback (CMFB) and internal frequency compensation have been used to ensure good common mode rejection ratio (CMRR) and stability of the OPAMP, respectively. In order to demonstrate the proposed idea, low power OPAMP is designed and simulated using in-house a-IGZO TFT model in Cadence Virtuoso. Circuit simulations have been carried out at a supply voltage and device channel length of 10 V and 20 m, respectively. From simulations, a gain of 30 dB and unity gain bandwidth of 106.8 kHz with a phase margin of 63 were noticed. The power consumed by the proposed OPAMP is 146.8 W, which is significantly lower compared to the OPAMPs implemented with various TFT technologies. The proposed OPAMP circuit would find potential applications in various real-world large area applications that need flexible electronics with low-power consumption like bio-medical and wearable devices.",

keywords = "a-IGZO TFT, CMFB, CMRR, Low-power design, OPAMP, TFT",

author = "Suprateek Shukla and Bhawna Tiwari and Nishtha Wadhwa and Bahubalindruni, {Pydi Ganga} and Pedro Barquinha",

note = "Sem PDF conforme despacho.; 22nd International Symposium on VLSI Design and Test, VDAT 2018 ; Conference date: 28-06-2018 Through 30-06-2018",

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Shukla, S, Tiwari, B, Wadhwa, N, Bahubalindruni, PG & Barquinha, P 2019, Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs. in S Rajaram, NB Balamurugan, D Gracia Nirmala Rani & V Singh (eds), VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers. Communications in Computer and Information Science, vol. 892, Springer, Singapore, pp. 370-379, 22nd International Symposium on VLSI Design and Test, VDAT 2018, Madurai, India, 28/06/18. https://doi.org/10.1007/978-981-13-5950-7_32

Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs. / Shukla, Suprateek; Tiwari, Bhawna; Wadhwa, Nishtha et al.
VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers. ed. / S. Rajaram; N.B. Balamurugan; D. Gracia Nirmala Rani; Virendra Singh. Singapore: Springer, 2019. p. 370-379 (Communications in Computer and Information Science; Vol. 892).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs

AU - Shukla, Suprateek

AU - Tiwari, Bhawna

AU - Wadhwa, Nishtha

AU - Bahubalindruni, Pydi Ganga

AU - Barquinha, Pedro

N1 - Sem PDF conforme despacho.

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Y1 - 2019

N2 - This paper proposes a novel low-power operational amplifier (OPAMP) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). By introducing dynamic operation, power consumption of the proposed OPAMP has been significantly reduced without compromising with other design parameters like gain, slew rate etc. In addition, common mode feedback (CMFB) and internal frequency compensation have been used to ensure good common mode rejection ratio (CMRR) and stability of the OPAMP, respectively. In order to demonstrate the proposed idea, low power OPAMP is designed and simulated using in-house a-IGZO TFT model in Cadence Virtuoso. Circuit simulations have been carried out at a supply voltage and device channel length of 10 V and 20 m, respectively. From simulations, a gain of 30 dB and unity gain bandwidth of 106.8 kHz with a phase margin of 63 were noticed. The power consumed by the proposed OPAMP is 146.8 W, which is significantly lower compared to the OPAMPs implemented with various TFT technologies. The proposed OPAMP circuit would find potential applications in various real-world large area applications that need flexible electronics with low-power consumption like bio-medical and wearable devices.

AB - This paper proposes a novel low-power operational amplifier (OPAMP) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). By introducing dynamic operation, power consumption of the proposed OPAMP has been significantly reduced without compromising with other design parameters like gain, slew rate etc. In addition, common mode feedback (CMFB) and internal frequency compensation have been used to ensure good common mode rejection ratio (CMRR) and stability of the OPAMP, respectively. In order to demonstrate the proposed idea, low power OPAMP is designed and simulated using in-house a-IGZO TFT model in Cadence Virtuoso. Circuit simulations have been carried out at a supply voltage and device channel length of 10 V and 20 m, respectively. From simulations, a gain of 30 dB and unity gain bandwidth of 106.8 kHz with a phase margin of 63 were noticed. The power consumed by the proposed OPAMP is 146.8 W, which is significantly lower compared to the OPAMPs implemented with various TFT technologies. The proposed OPAMP circuit would find potential applications in various real-world large area applications that need flexible electronics with low-power consumption like bio-medical and wearable devices.

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Shukla S, Tiwari B, Wadhwa N, Bahubalindruni PG , Barquinha P. Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs. In Rajaram S, Balamurugan NB, Gracia Nirmala Rani D, Singh V, editors, VLSI Design and Test - 22nd International Symposium, VDAT 2018, Revised Selected Papers. Singapore: Springer. 2019. p. 370-379. (Communications in Computer and Information Science). doi: 10.1007/978-981-13-5950-7_32

Low-Power Switched Operational Amplifier Using a-InGaZnO TFTs

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