Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a capacitance readout circuit with high sensitivity and low power consumption using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). A relaxation oscillator is proposed to convert the sensor output (capacitance) into frequency. The proposed circuit has bootstrapping load to improve the output voltage swing using unipolar transistors. A differential to single ended converter and a buffer are used to get rail to rail output voltage. Simulation results show an improvement in sensitivity (832 Hz/pF) and power consumption (1.4 mW) as compared to the conventional ring oscillator based designs (142 Hz/pF, 1.9 mW) when circuits are simulated with a power supply of 10V, without compromising voltage swing. Therefore, this circuit finds potential application to implement sensing systems with flexible electronics.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)978-1-7281-9201-7
ISBN (Print)978-1-7281-9200-0
DOIs
Publication statusPublished - 2021
Event53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of
Duration: 22 May 202128 May 2021

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2021-May
ISSN (Print)0271-4310

Conference

Conference53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
Country/TerritoryKorea, Republic of
CityDaegu
Period22/05/2128/05/21

Keywords

  • Humidity readout
  • Oxide TFTs
  • Relaxation oscillator

Fingerprint

Dive into the research topics of 'Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs'. Together they form a unique fingerprint.

Cite this