Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs

Prabal Bhatnagar; Pydi Ganga Bahubalindruni; Pedro Barquinha

doi:10.1109/ISCAS51556.2021.9401699

Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs

Prabal Bhatnagar, Pydi Ganga Bahubalindruni, Pedro Barquinha

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This paper presents a capacitance readout circuit with high sensitivity and low power consumption using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). A relaxation oscillator is proposed to convert the sensor output (capacitance) into frequency. The proposed circuit has bootstrapping load to improve the output voltage swing using unipolar transistors. A differential to single ended converter and a buffer are used to get rail to rail output voltage. Simulation results show an improvement in sensitivity (832 Hz/pF) and power consumption (1.4 mW) as compared to the conventional ring oscillator based designs (142 Hz/pF, 1.9 mW) when circuits are simulated with a power supply of 10V, without compromising voltage swing. Therefore, this circuit finds potential application to implement sensing systems with flexible electronics.

Original language	English
Title of host publication	2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)	978-1-7281-9201-7
ISBN (Print)	978-1-7281-9200-0
DOIs	https://doi.org/10.1109/ISCAS51556.2021.9401699
Publication status	Published - 2021
Event	53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of Duration: 22 May 2021 → 28 May 2021

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2021-May
ISSN (Print)	0271-4310

Conference

Conference	53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
Country/Territory	Korea, Republic of
City	Daegu
Period	22/05/21 → 28/05/21

Keywords

Humidity readout
Oxide TFTs
Relaxation oscillator

Access to Document

10.1109/ISCAS51556.2021.9401699

Cite this

Bhatnagar, P., Bahubalindruni, P. G., & Barquinha, P. (2021). Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs. In 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings Article 9401699 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2021-May). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISCAS51556.2021.9401699

Bhatnagar, Prabal ; Bahubalindruni, Pydi Ganga ; Barquinha, Pedro. / Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs. 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings. Piscataway : Institute of Electrical and Electronics Engineers (IEEE), 2021. (Proceedings - IEEE International Symposium on Circuits and Systems).

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title = "Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs",

abstract = "This paper presents a capacitance readout circuit with high sensitivity and low power consumption using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). A relaxation oscillator is proposed to convert the sensor output (capacitance) into frequency. The proposed circuit has bootstrapping load to improve the output voltage swing using unipolar transistors. A differential to single ended converter and a buffer are used to get rail to rail output voltage. Simulation results show an improvement in sensitivity (832 Hz/pF) and power consumption (1.4 mW) as compared to the conventional ring oscillator based designs (142 Hz/pF, 1.9 mW) when circuits are simulated with a power supply of 10V, without compromising voltage swing. Therefore, this circuit finds potential application to implement sensing systems with flexible electronics.",

keywords = "Humidity readout, Oxide TFTs, Relaxation oscillator",

author = "Prabal Bhatnagar and Bahubalindruni, {Pydi Ganga} and Pedro Barquinha",

note = "Funding Information: info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F122286%2F2016/PT# info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2013/PT# info:eu-repo/grantAgreement/EC/H2020/716510/EU# info:eu-repo/grantAgreement/EC/H2020/692373/EU# This work is also supported by early career research grant with project ref. ECR/2017/000931 and IISER Bhopal. T Publisher Copyright: {\textcopyright} 2021 IEEE; 53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 ; Conference date: 22-05-2021 Through 28-05-2021",

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Bhatnagar, P, Bahubalindruni, PG & Barquinha, P 2021, Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs. in 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings., 9401699, Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2021-May, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, 53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021, Daegu, Korea, Republic of, 22/05/21. https://doi.org/10.1109/ISCAS51556.2021.9401699

Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs. / Bhatnagar, Prabal; Bahubalindruni, Pydi Ganga ; Barquinha, Pedro.
2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings. Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2021. 9401699 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2021-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs

AU - Bhatnagar, Prabal

AU - Bahubalindruni, Pydi Ganga

AU - Barquinha, Pedro

N1 - Funding Information: info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F122286%2F2016/PT# info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2013/PT# info:eu-repo/grantAgreement/EC/H2020/716510/EU# info:eu-repo/grantAgreement/EC/H2020/692373/EU# This work is also supported by early career research grant with project ref. ECR/2017/000931 and IISER Bhopal. T Publisher Copyright: © 2021 IEEE

PY - 2021

Y1 - 2021

N2 - This paper presents a capacitance readout circuit with high sensitivity and low power consumption using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). A relaxation oscillator is proposed to convert the sensor output (capacitance) into frequency. The proposed circuit has bootstrapping load to improve the output voltage swing using unipolar transistors. A differential to single ended converter and a buffer are used to get rail to rail output voltage. Simulation results show an improvement in sensitivity (832 Hz/pF) and power consumption (1.4 mW) as compared to the conventional ring oscillator based designs (142 Hz/pF, 1.9 mW) when circuits are simulated with a power supply of 10V, without compromising voltage swing. Therefore, this circuit finds potential application to implement sensing systems with flexible electronics.

AB - This paper presents a capacitance readout circuit with high sensitivity and low power consumption using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). A relaxation oscillator is proposed to convert the sensor output (capacitance) into frequency. The proposed circuit has bootstrapping load to improve the output voltage swing using unipolar transistors. A differential to single ended converter and a buffer are used to get rail to rail output voltage. Simulation results show an improvement in sensitivity (832 Hz/pF) and power consumption (1.4 mW) as compared to the conventional ring oscillator based designs (142 Hz/pF, 1.9 mW) when circuits are simulated with a power supply of 10V, without compromising voltage swing. Therefore, this circuit finds potential application to implement sensing systems with flexible electronics.

KW - Humidity readout

KW - Oxide TFTs

KW - Relaxation oscillator

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DO - 10.1109/ISCAS51556.2021.9401699

M3 - Conference contribution

SN - 978-1-7281-9200-0

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

BT - 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway

T2 - 53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021

Y2 - 22 May 2021 through 28 May 2021

ER -

Bhatnagar P, Bahubalindruni PG , Barquinha P. Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs. In 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021: Proceedings. Piscataway: Institute of Electrical and Electronics Engineers (IEEE). 2021. 9401699. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS51556.2021.9401699

Low-power high sensitive capacitance read-out circuit using a-InGaZnO TFTs

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