TY - GEN
T1 - Low-power ethanol sensor read-out circuit using a-InGaZnO TFTs
AU - Tiwari, Bhawna
AU - Bhatnagar, Prabal
AU - Bahubalindruni, Pydi Ganga
AU - Barquinha, Pedro
N1 - Funding Information:
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2013/PT#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F122286%2F2016/PT#
info:eu-repo/grantAgreement/EC/H2020/716510/EU#
info:eu-repo/grantAgreement/EC/H2020/692373/EU#
This work is also supported by early career research grant with project ref. ECR/2017/000931 and IISER Bhopal. This publication is also an outcome of the R & D work undertaken project under the Visvesvaraya PhD Scheme of MeitY, Government of India, being implemented by DIC.
Publisher Copyright:
© 2020 IEEE
PY - 2020
Y1 - 2020
N2 - This paper presents a low-power ethanol sensing read-out circuit using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The read-out circuit is implemented with a proposed low-power high-speed ring oscillator (RO). The proposed RO employs bootstrapped pseudo-CMOS inverter, whose delay and power are reduced by using intermediate signals generated within the RO, hence, ensuring a high frequency of oscillations and low-power consumption. This design further ensures improved sensitivity of the readout circuit. To validate the proposed idea, 9-stage conventional low-power and proposed ROs have been designed and simulated using in-house a-InGaZnO TFT models at a supply voltage of 8V. Simulation results show that the proposed RO provides 11.8% improvement in the frequency of oscillations and 18.5% reduction in power consumption compared to the conventional design. Further, the proposed circuit has shown an improvement of 9% in the sensitivity compared to the conventional design. Therefore, this circuit finds potential application in read-out sensing systems.
AB - This paper presents a low-power ethanol sensing read-out circuit using amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs). The read-out circuit is implemented with a proposed low-power high-speed ring oscillator (RO). The proposed RO employs bootstrapped pseudo-CMOS inverter, whose delay and power are reduced by using intermediate signals generated within the RO, hence, ensuring a high frequency of oscillations and low-power consumption. This design further ensures improved sensitivity of the readout circuit. To validate the proposed idea, 9-stage conventional low-power and proposed ROs have been designed and simulated using in-house a-InGaZnO TFT models at a supply voltage of 8V. Simulation results show that the proposed RO provides 11.8% improvement in the frequency of oscillations and 18.5% reduction in power consumption compared to the conventional design. Further, the proposed circuit has shown an improvement of 9% in the sensitivity compared to the conventional design. Therefore, this circuit finds potential application in read-out sensing systems.
KW - Low-power ring oscillator
KW - Oxide TFTs
KW - Read-out sensors
UR - http://www.scopus.com/inward/record.url?scp=85109005505&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85109005505
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers (IEEE)
T2 - 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
Y2 - 10 October 2020 through 21 October 2020
ER -