The linearity and sensitivity of linear Position Sensitive Detectors (PSD) are the two principal characteristics of sensors to be optimised in sensor fabrication. This work presents several efforts made to understand the internal and external parameters that influence the linearity and sensitivity of Metal Insulator Semiconductor (MIS) linear PSD with an active length of 6 cm. The use of long sensitive areas allows the PSD to achieve greater resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multi-layered structure consisting of Cr/a- Si: H (n(+) doped)/a-Si: H ( intrinsic)/SiOx (passivation layer)/Au, where the active a-Si: H layers were deposited by Modified Triode Plasma Enhanced Chemical Vapour Deposition (MTPECVD), which allows the deposition of good electronic grade material with a low (approximate to 1 x 10(15) cm(-3)) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio, SiOx layer and on the value of the load resistance. Sensitivities of more than 30 mV/cm were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response in the near-UV region and has its maximum response at 540 nm.