Light-controlled switching transients in MIS silicon structures with multichannel insulator: physical processes and new device modelling

A. Malik, R. Martins

Research output: Contribution to journalArticle

Abstract

We present the modelling of a new two-terminal and low-voltage operating optoelectronic device based on MIS silicon structure with multichannel insulator and having as gate a transparent metallic tin-doped indium oxide (ITO) layer deposited by spray pyrolysis technique over the insulator layer. ITO layer has a multiple non-rectifier electrical contact with silicon substrate, in the SiO2 channel's region. Construction details of the process, together with its operating characteristics are given. The devices developed do not require external active electronic components (transistors, microschemes) to execute their functions and to transform analogue input optical signals to digital output form, highly important for a wide range of optoelectronic applications.

Original languageEnglish
Pages (from-to)257-262
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume490
Publication statusPublished - 1998
Event1997 MRS Fall Symposium - Boston, United States
Duration: 2 Dec 19974 Dec 1997

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