Light-controlled switching transients in MIS silicon structures with multichannel insulator: physical processes and new device modelling

We present the modelling of a new two-terminal and low-voltage operating optoelectronic device based on MIS silicon structure with multichannel insulator and having as gate a transparent metallic tin-doped indium oxide (ITO) layer deposited by spray pyrolysis technique over the insulator layer. ITO layer has a multiple non-rectifier electrical contact with silicon substrate, in the SiO₂ channel's region. Construction details of the process, together with its operating characteristics are given. The devices developed do not require external active electronic components (transistors, microschemes) to execute their functions and to transform analogue input optical signals to digital output form, highly important for a wide range of optoelectronic applications.