Lateral effects in amorphous silicon photodiodes

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Abstract

The objective of this work is to provide a basis for the interpretation of the a-Si:H photodiode behaviour under low illumination level conditions, where a lateral leakage current plays an important role on the devices' performances when the doped collecting layer can not be considered a true equipotential. To determine this effect, a-Si:H p.i.n devices with small metal dot contacts, matrix distributed, were produced and analysed before and after etching the surrounding doped region of the metal collecting contact. The experimental data fit a model that includes the contribution of a lateral leakage current influencing the J-V characteristics, responsivity and the apparent light degradation behaviour of the device.

Original languageEnglish
Pages (from-to)137-144
Number of pages8
JournalOptical Materials
Volume5
Issue number1-2
Publication statusPublished - Jan 1996

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