TY - JOUR
T1 - Large area image sensing structures based on a-SiC : H: a dynamic characterization
AU - Fernandes, Miguel
AU - Vieira, Maria Manuela de Almeida Carvalho
AU - Rodrigues, Isabel Cabrita
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/8/16
Y1 - 2004/8/16
N2 - In recent works large area hydrogenated amorphous silicon p-i-n structures with low conductivity doped layers were proposed as single element image sensors. The working principle of this type of sensor is based on the modulation, by the local illumination conditions, of the photocurrent generated by a light beam scanning the active area of the device. In order to evaluate the sensor capabilities is necessary to perform a response time characterization. This work focuses on the transient response of such sensor and on the influence of the carbon contents of the doped layers. In order to evaluate the response time a set of devices with different percentage of carbon incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions.
AB - In recent works large area hydrogenated amorphous silicon p-i-n structures with low conductivity doped layers were proposed as single element image sensors. The working principle of this type of sensor is based on the modulation, by the local illumination conditions, of the photocurrent generated by a light beam scanning the active area of the device. In order to evaluate the sensor capabilities is necessary to perform a response time characterization. This work focuses on the transient response of such sensor and on the influence of the carbon contents of the doped layers. In order to evaluate the response time a set of devices with different percentage of carbon incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions.
KW - Large area
KW - Spectral response
KW - Heterostructures
KW - Image sensor
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-3242733019&origin=inward&txGid=6f6717f5bbce778c97266cfdc187903d#
U2 - 10.1016/j.sna.2004.03.007
DO - 10.1016/j.sna.2004.03.007
M3 - Article
SN - 0924-4247
VL - 113
SP - 360
EP - 364
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
IS - 3
ER -