Abstract
The aim of this work is to present the main optoelectronic characteristics of large-area one-dimensional position-sensitive detectors (1D TFPSDs) based on amorphous silicon (a-Si) p-i-n diodes. From that, the device resolution, response time and detectivity (defined as being the reciprocal of the noise equivalent power pattern) are derived and discussed concerning the field of applications of the 1D TFPSDs.
Original language | English |
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Pages (from-to) | 135-142 |
Number of pages | 8 |
Journal | Sensors And Actuators A-Physical |
Volume | 51 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 1995 |
Keywords
- Amorphous silicon
- Large-area devices
- Position-sensitive detectors
- Thin films