TY - JOUR
T1 - ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates
AU - Carvalho, N.
AU - Lavareda, G. Lavareda
AU - Fortunato, Elvira Maria Correia
AU - Gonçalves, Alexandra
AU - Nascimento, R.
AU - Amaral, Ana
PY - 2005/4/25
Y1 - 2005/4/25
N2 - Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10(-2) ohm cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9 x 10(-3) ohm cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility.
AB - Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10(-2) ohm cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9 x 10(-3) ohm cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility.
KW - ZnO-coated polymer substrates
KW - room temperature
KW - indium tin oxide (ITO)
KW - electrical resistivity
KW - rf-plasma enhanced reactive thermal evaporation (rf-PERTE)
U2 - 10.1016/j.mseb.2004.12.015
DO - 10.1016/j.mseb.2004.12.015
M3 - Article
SN - 09215107
VL - 118
SP - 66
EP - 69
JO - MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
JF - MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
IS - 1-3
ER -