ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition

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Abstract

The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20wt.%. The average thickness of the ITO films is of about 90nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: An average visible transmittance of 80% and an electrical resistivity of 1.6×10-3Ωcm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6×10-4Ωcm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility.
Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalMaterials Science And Engineering B-Advanced Functional Solid-State Materials
Volume109
Issue number1-3
DOIs
Publication statusPublished - 15 Jun 2004

Keywords

  • In-Sn alloy
  • Indium tin oxide (ITO)
  • Polymer Substrates
  • rf-Plasma enhanced reactive thermal evaporation (rf-PERTE)
  • Room temperature
  • Annealing
  • Carrier mobility
  • Composition
  • Electric conductivity
  • Deposition
  • Polyethylene terephthalates
  • Thermal effects
  • Substrates
  • Indium compounds
  • Thin films
  • Radio frequencies
  • Spray pyrolysis
  • Tin oxides
  • indium oxide
  • Indium

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