ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition

Carlos Alberto Nunes de Carvalho; Guilherme António Rodrigues Lavareda; Elvira Maria Correia Fortunato; Paula Vilarinho; Ana Amaral

doi:10.1016/j.mseb.2003.10.089

ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition

Carlos Alberto Nunes de Carvalho, Guilherme António Rodrigues Lavareda, Elvira Maria Correia Fortunato, Paula Vilarinho, Ana Amaral

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20wt.%. The average thickness of the ITO films is of about 90nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: An average visible transmittance of 80% and an electrical resistivity of 1.6×10-3Ωcm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6×10-4Ωcm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility.

Original language	English
Pages (from-to)	245-248
Number of pages	4
Journal	Materials Science And Engineering B-Advanced Functional Solid-State Materials
Volume	109
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.10.089
Publication status	Published - 15 Jun 2004

Keywords

In-Sn alloy
Indium tin oxide (ITO)
Polymer Substrates
rf-Plasma enhanced reactive thermal evaporation (rf-PERTE)
Room temperature
Annealing
Carrier mobility
Composition
Electric conductivity
Deposition
Polyethylene terephthalates
Thermal effects
Substrates
Indium compounds
Thin films
Radio frequencies
Spray pyrolysis
Tin oxides
indium oxide
Indium

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Carvalho, C. A. N. D., Lavareda, G. A. R., Fortunato, E. M. C., Vilarinho, P., & Amaral, A. (2004). ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition. Materials Science And Engineering B-Advanced Functional Solid-State Materials, 109(1-3), 245-248. https://doi.org/10.1016/j.mseb.2003.10.089

Carvalho, Carlos Alberto Nunes de ; Lavareda, Guilherme António Rodrigues ; Fortunato, Elvira Maria Correia ; Vilarinho, Paula ; Amaral, Ana. / ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition. In: Materials Science And Engineering B-Advanced Functional Solid-State Materials. 2004 ; Vol. 109, No. 1-3. pp. 245-248.

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title = "ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition",

abstract = "The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20wt.%. The average thickness of the ITO films is of about 90nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: An average visible transmittance of 80% and an electrical resistivity of 1.6×10-3Ωcm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6×10-4Ωcm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility.",

keywords = "In-Sn alloy, Indium tin oxide (ITO), Polymer Substrates, rf-Plasma enhanced reactive thermal evaporation (rf-PERTE), Room temperature, Annealing, Carrier mobility, Composition, Electric conductivity, Deposition, Polyethylene terephthalates, Thermal effects, Substrates, Indium compounds, Thin films, Radio frequencies, Spray pyrolysis, Tin oxides, indium oxide, Indium",

author = "Carvalho, {Carlos Alberto Nunes de} and Lavareda, {Guilherme Ant{\'o}nio Rodrigues} and Fortunato, {Elvira Maria Correia} and Paula Vilarinho and Ana Amaral",

year = "2004",

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doi = "10.1016/j.mseb.2003.10.089",

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ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition. / Carvalho, Carlos Alberto Nunes de ; Lavareda, Guilherme António Rodrigues ; Fortunato, Elvira Maria Correia; Vilarinho, Paula; Amaral, Ana.

In: Materials Science And Engineering B-Advanced Functional Solid-State Materials, Vol. 109, No. 1-3, 15.06.2004, p. 245-248.

Research output: Contribution to journal › Article

TY - JOUR

T1 - ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition

AU - Carvalho, Carlos Alberto Nunes de

AU - Lavareda, Guilherme António Rodrigues

AU - Fortunato, Elvira Maria Correia

AU - Vilarinho, Paula

AU - Amaral, Ana

PY - 2004/6/15

Y1 - 2004/6/15

N2 - The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20wt.%. The average thickness of the ITO films is of about 90nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: An average visible transmittance of 80% and an electrical resistivity of 1.6×10-3Ωcm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6×10-4Ωcm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility.

AB - The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20wt.%. The average thickness of the ITO films is of about 90nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: An average visible transmittance of 80% and an electrical resistivity of 1.6×10-3Ωcm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6×10-4Ωcm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility.

KW - In-Sn alloy

KW - Indium tin oxide (ITO)

KW - Polymer Substrates

KW - rf-Plasma enhanced reactive thermal evaporation (rf-PERTE)

KW - Room temperature

KW - Annealing

KW - Carrier mobility

KW - Composition

KW - Electric conductivity

KW - Deposition

KW - Polyethylene terephthalates

KW - Thermal effects

KW - Substrates

KW - Indium compounds

KW - Thin films

KW - Radio frequencies

KW - Spray pyrolysis

KW - Tin oxides

KW - indium oxide

KW - Indium

U2 - 10.1016/j.mseb.2003.10.089

DO - 10.1016/j.mseb.2003.10.089

M3 - Article

VL - 109

SP - 245

EP - 248

JO - Materials Science And Engineering B-Advanced Functional Solid-State Materials

JF - Materials Science And Engineering B-Advanced Functional Solid-State Materials

SN - 0921-5107

IS - 1-3

ER -