TY - JOUR
T1 - Ionically Modified Cellulose Nanocrystal Self-Assembled Films with a Mesoporous Twisted Superstructure: Polarizability and Application in Ion-Gated Transistors
AU - Grey, Paul
AU - Fernandes, Susete N.
AU - Gaspar, Diana
AU - Deuermeier, Jonas
AU - Martins, Rodrigo
AU - Fortunato, Elvira
AU - Godinho, Maria H.
AU - Pereira, Luis
N1 - info:eu-repo/grantAgreement/EC/H2020/640598/EU#
info:eu-repo/grantAgreement/EC/H2020/692373/EU#
info:eu-repo/grantAgreement/FCT/5876/147333/PT#
info:eu-repo/grantAgreement/EC/H2020/700395/EU#
FCT – Portuguese Foundation for Science and Technology through the Ph.D. scholarship SFRH/BD/125191/2016.
project PapEl, reference PTDC/CTM-NAN/5172/2014.
project CHIHC, reference PTDC/NAN-MAT/32558/2017.
project PTDC/CTM-BIO/6178/2014, M-ERA-NET2/0007/2016 (CellColor).
POR Lisboa2020 through project PTDC/CTM-REF/30529/2017.
D.G. acknowledges the support from FCT – Portuguese Foundation for Science and Technology through the AdvaMTech PhD program scholarship PD/BD/52627/2014.
PY - 2020/2/25
Y1 - 2020/2/25
N2 - Mesoporous structures made of cellulose nanocrystals (CNCs) and their self-assembly into films are of great interest not only due to their abundancy and sustainability but also due to their ease of chemical modification and nanoscale biomimicry capabilities. However, their implementation in (opto)electronic devices requires further understanding on how these self-assembled twisted mesoporous superstructures respond to electrical stimulus. In this regard, this work focuses on the infiltration of solid CNC droplets with three distinct alkali ions (Li+, Na+, and K+) to yield films with improved electrochemical response when compared to pristine ones, while preserving their photonic character. Electrochemical characterization shows capacitances of up to 2.5 μF cm–2 allowing for their integration as solid-state gate electrolytes in amorphous indium–gallium–zinc–oxide transistors, resulting in low operating voltages (<2 V), on/off ratios of up to 6 orders of magnitude, and high saturation mobilities >10 cm2 V–1 s–1. Devices fabricated on Na+ and K+ infiltrated CNC films present the best characteristics, indicating pure capacitive charging of the semiconductor. The insights presented here contribute to applications in solid-state ionics in mesoporous structures or the combination of optically active electrolytes capable of providing unique functionalities in ion-gated transistors and circuitry.
AB - Mesoporous structures made of cellulose nanocrystals (CNCs) and their self-assembly into films are of great interest not only due to their abundancy and sustainability but also due to their ease of chemical modification and nanoscale biomimicry capabilities. However, their implementation in (opto)electronic devices requires further understanding on how these self-assembled twisted mesoporous superstructures respond to electrical stimulus. In this regard, this work focuses on the infiltration of solid CNC droplets with three distinct alkali ions (Li+, Na+, and K+) to yield films with improved electrochemical response when compared to pristine ones, while preserving their photonic character. Electrochemical characterization shows capacitances of up to 2.5 μF cm–2 allowing for their integration as solid-state gate electrolytes in amorphous indium–gallium–zinc–oxide transistors, resulting in low operating voltages (<2 V), on/off ratios of up to 6 orders of magnitude, and high saturation mobilities >10 cm2 V–1 s–1. Devices fabricated on Na+ and K+ infiltrated CNC films present the best characteristics, indicating pure capacitive charging of the semiconductor. The insights presented here contribute to applications in solid-state ionics in mesoporous structures or the combination of optically active electrolytes capable of providing unique functionalities in ion-gated transistors and circuitry.
KW - cellulose nanocrystals
KW - self-assembly
KW - mesoporous structures
KW - ion-gated transistors
KW - photonics
U2 - 10.1021/acsaelm.9b00652
DO - 10.1021/acsaelm.9b00652
M3 - Article
SN - 2637-6113
VL - 2
SP - 426
EP - 436
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 2
ER -