Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors

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Abstract

This paper presents the results achieved in optimized 1D position sensitive detectors (PSD) using a metal-insulator-semiconductor (MIS) structure and different length to width ratios, in order to determine the optimal geometrical factor for the desired 3D integration. The results show that the optimized MIS PSD produced, exhibited linearity errors as low as 0.8% and sensitivities of 32 mV/cm, for a 5 mW spot beam intensity at a wavelength of 532 nm. The sensors can achieve a longitudinal spatial resolution of 1.25 μm (estimated by modulation transfer function calculation), while the transverse resolution depends on the minimum width used for each sensor. The calculated Jones parameter of the sensors is higher than 1011 J, with a fall-off parameter of 0.012 cm-1, indicating a high signal to noise detection ratio.
Original languageEnglish
Pages (from-to)1787-1791
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2006

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