Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

Engineering & Materials Science

• Charge trapping 36%
• Electrons 23%
• Gate dielectrics 100%
• Molecules 22%
• Oxide semiconductors 83%
• Polarization 21%
• Reaction rates 26%
• Semiconductor materials 20%
• Thin film transistors 29%
• Threshold voltage 25%

Physics & Astronomy

• anomalies 56%
• electrons 7%
• molecules 9%
• oxides 43%
• polarization 9%
• reaction kinetics 15%
• shift 21%
• thin films 9%
• threshold voltage 16%
• transistors 13%
• trapping 27%

Chemistry

• Dielectric Material 61%
• Molecule 8%
• Oxide 38%
• Polarization 17%
• Semiconductor 53%
• Time 8%
• Voltage 16%