Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si: H p-i-n Diodes

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Abstract

In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device.

Original languageEnglish
Pages (from-to)2143-2152
Number of pages10
JournalIeee Transactions On Electron Devices
Volume43
Issue number12
DOIs
Publication statusPublished - 1996

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