TY - JOUR
T1 - Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si
T2 - H p-i-n Diodes
AU - Martins, Rodrigo F P
AU - Fortunato, Elvira M C
PY - 1996
Y1 - 1996
N2 - In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device.
AB - In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device.
UR - http://www.scopus.com/inward/record.url?scp=0030379338&partnerID=8YFLogxK
U2 - 10.1109/16.544385
DO - 10.1109/16.544385
M3 - Article
AN - SCOPUS:0030379338
VL - 43
SP - 2143
EP - 2152
JO - Ieee Transactions On Electron Devices
JF - Ieee Transactions On Electron Devices
SN - 0018-9383
IS - 12
ER -