InOx semiconductor films deposited on glass substrates for transparent electronics

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Abstract

Transparent undoped semiconductor indium oxide films were deposited by radio frequency (rf) plasma enhanced reactive thermalevaporation (rf-PERTE) of indium at low substrate temperature. It was experimentally verified that the variation of rf power densityhas a strong influence on the electrical and structural properties of the films. The thickness of the InO x films is of about 100 nm. Resultsshow that InO x films show an average visible transmittance of about 85% and energy gap of about 2.6 eV. Structural and electrical conductivity measurements show that films are polycrystalline and there exists a linear variation of conductivity logarithm vs reciprocal oftemperature. Electrical conductivity variation of 17.6 to 5.8 x 10-3 (Ω cm)-1 for films produced at rf power densities ranging from 3.9 to78.1 mW cm-3 was obtained. This controllable semiconductor behavior can therefore satisfy the requirement of a particular applicationfor these type of films.
Original languageUnknown
Pages (from-to)2315-2318
JournalJournal of Non-Crystalline Solids
Volume352
Issue numberNA
DOIs
Publication statusPublished - 1 Jan 2006

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