Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell

Leandro Raniero, Natália E. Martins, Paulo Canhola, Shibin Zhang, S. Pereira, Isabel Ferreira, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30 x 40 cm(2)) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm(2), aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm(2) and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.
Original languageEnglish
Pages (from-to)349-355
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume87
Issue number1-4
DOIs
Publication statusPublished - May 2005

Fingerprint Dive into the research topics of 'Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell'. Together they form a unique fingerprint.

Cite this