Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell

Leandro Raniero; Natália E. Martins; Paulo Canhola; Shibin Zhang; S. Pereira; Isabel  Ferreira; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.solmat.2004.08.014

Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell

Leandro Raniero, Natália E. Martins, Paulo Canhola, Shibin Zhang, S. Pereira, Isabel Ferreira, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30 x 40 cm(2)) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm(2), aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm(2) and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.

Original language	English
Pages (from-to)	349-355
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	87
Issue number	1-4
DOIs	https://doi.org/10.1016/j.solmat.2004.08.014
Publication status	Published - May 2005

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title = "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell",

abstract = "The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30 x 40 cm(2)) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm(2), aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm(2) and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.",

keywords = "conversion efficiency, solar cells",

author = "Leandro Raniero and Martins, {Nat{\'a}lia E.} and Paulo Canhola and Shibin Zhang and S. Pereira and Isabel Ferreira and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2005",

month = may,

doi = "10.1016/j.solmat.2004.08.014",

language = "English",

volume = "87",

pages = "349--355",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "North-Holland | Elsevier",

number = "1-4",

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TY - JOUR

T1 - Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell

AU - Raniero, Leandro

AU - Martins, Natália E.

AU - Canhola, Paulo

AU - Zhang, Shibin

AU - Pereira, S.

AU - Ferreira, Isabel

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2005/5

Y1 - 2005/5

N2 - The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30 x 40 cm(2)) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm(2), aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm(2) and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.

AB - The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30 x 40 cm(2)) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm(2), aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm(2) and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.

KW - conversion efficiency

KW - solar cells

U2 - 10.1016/j.solmat.2004.08.014

DO - 10.1016/j.solmat.2004.08.014

M3 - Article

VL - 87

SP - 349

EP - 355

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1-4

ER -

Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell

Abstract

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