Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

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Abstract

Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H, as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E-2 mode peak at 436cm(-1) and its PL spectrum appears a shoulder at 3.367eV on the higher energy side. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageUnknown
Title of host publicationPHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
Pages1010-1013
Volume3
DOIs
Publication statusPublished - 1 Jan 2006
Event12th International Conference on II-VI Compounds -
Duration: 1 Jan 2005 → …

Conference

Conference12th International Conference on II-VI Compounds
Period1/01/05 → …

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