Abstract
Undoped and doped (indium and aluminium) zinc oxide (ZnO) thin films have been prepared by spray pyrolysis, and the effect of the doping and annealing atmosphere on the electrical, optical and structural properties of the produced films has been investigated. The deposited films have a high resistivity. Annealing the films in an argon atmosphere or under vacuum leads to a substantial reduction of the electrical resistivity of the films and to an increase on the degree of cristallinity of the deposited material. The most pronounced changes were observed in the films annealed in Argon. The results also indicate that doping highly influences the electrical and structural properties of the films, which is more pronounced in the films doped with Indium.
| Original language | English |
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| Pages (from-to) | 45-49 |
| Number of pages | 5 |
| Journal | Vacuum |
| Volume | 52 |
| Issue number | 1-2 |
| Publication status | Published - 1999 |