Influence of photodegradation on the υτ and microstructure of pin a-Si: H devices

Research output: Contribution to journalArticle

Abstract

Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.

Original languageEnglish
Pages (from-to)1109-1111
Number of pages3
JournalVacuum
Volume45
Issue number10-11
DOIs
Publication statusPublished - 1994

Fingerprint Dive into the research topics of 'Influence of photodegradation on the υτ and microstructure of pin a-Si: H devices'. Together they form a unique fingerprint.

Cite this