Abstract
Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.
Original language | English |
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Pages (from-to) | 1109-1111 |
Number of pages | 3 |
Journal | Vacuum |
Volume | 45 |
Issue number | 10-11 |
DOIs | |
Publication status | Published - 1994 |