Influence of photodegradation on the υτ and microstructure of pin a-Si: H devices

M. Vieira; E. Fortunato; CN Carvalho; G. Lavareda; R. Martins

doi:10.1016/0042-207X(94)90037-X

Influence of photodegradation on the υτ and microstructure of pin a-Si: H devices

M. Vieira, E. Fortunato, CN Carvalho, G. Lavareda, R. Martins

Research output: Contribution to journal › Article › peer-review

Abstract

Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.

Original language	English
Pages (from-to)	1109-1111
Number of pages	3
Journal	Vacuum
Volume	45
Issue number	10-11
DOIs	https://doi.org/10.1016/0042-207X(94)90037-X
Publication status	Published - 1994

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title = "Influence of photodegradation on the υτ and microstructure of pin a-Si: H devices",

abstract = "Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.",

author = "M. Vieira and E. Fortunato and CN Carvalho and G. Lavareda and R. Martins",

year = "1994",

doi = "10.1016/0042-207X(94)90037-X",

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journal = "Vacuum",

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T1 - Influence of photodegradation on the υτ and microstructure of pin a-Si

T2 - H devices

AU - Vieira, M.

AU - Fortunato, E.

AU - Carvalho, CN

AU - Lavareda, G.

AU - Martins, R.

PY - 1994

Y1 - 1994

N2 - Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.

AB - Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process.

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