Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Luis Miguel Nunes Pereira; Pedro Miguel Cândido Barquinha; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.tsf.2005.01.045

Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Luis Miguel Nunes Pereira, Pedro Miguel Cândido Barquinha, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Original language	English
Pages (from-to)	102-106
Number of pages	5
Journal	Thin Solid Films
Volume	487
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.01.045
Publication status	Published - 1 Sept 2005

Access to Document

10.1016/j.tsf.2005.01.045

Cite this

@article{1815295c13f248caa1139248f2edb381,

title = "Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors",

author = "Pereira, {Luis Miguel Nunes} and Barquinha, {Pedro Miguel C{\^a}ndido} and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2005",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2005.01.045",

language = "English",

volume = "487",

pages = "102--106",

journal = "Thin Solid Films",

issn = "0040-6090",

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number = "1-2",

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T1 - Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

AU - Pereira, Luis Miguel Nunes

AU - Barquinha, Pedro Miguel Cândido

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2005/9/1

Y1 - 2005/9/1

U2 - 10.1016/j.tsf.2005.01.045

DO - 10.1016/j.tsf.2005.01.045

M3 - Article

SN - 0040-6090

VL - 487

SP - 102

EP - 106

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -