TY - JOUR
T1 - Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance
AU - Bahubalindruni, Pydi Ganga
AU - Kiazadeh, Asal
AU - Sacchetti, Allegra
AU - Martins, Jorge
AU - Rovisco, Ana
AU - Tavares, Vitor Grade
AU - Martins, Rodrigo
AU - Fortunato, Elvira
AU - Barquinha, Pedro
N1 - This work was supported by FEDER funds through the COMPETE 2020 Program and National Funds through FCT-Portuguese Foundation for Science and Technology under Projects UID/CTM/50025/2013 and EXCL/CTM-NAN/0201/2012, by the European Communities 7th Framework Program under Grant ICT-2013-10-611070 (i-FLEXIS project), and by H2020 Program under ICT-03-2014-644631 (ROLL-OUT project).
PY - 2016/6/1
Y1 - 2016/6/1
N2 - This paper presents a study concerning the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding 180\, ^{\circ}C. The parameters under investigation are unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As the channel length varies from 160 to 3 \mum, the measured cutoff frequency increases from 163 {\rm kHz} to 111.5 {\rm MHz}, which is a superior value compared to the other competing low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to 5.3 and the on-resistance is decreasing from 1135.6 to 26.1 k\Omega. TFTs with smaller channel length (3 \mu m) have shown a highly negative turn-on voltage and hump in the subthreshold region, which can be attributed to short channel effects. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design, enabling an adequate selection of device dimensions to maximize the performance of different circuit building blocks assuring the multifunctionality demanded by system-on-panel concepts.
AB - This paper presents a study concerning the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding 180\, ^{\circ}C. The parameters under investigation are unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As the channel length varies from 160 to 3 \mum, the measured cutoff frequency increases from 163 {\rm kHz} to 111.5 {\rm MHz}, which is a superior value compared to the other competing low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to 5.3 and the on-resistance is decreasing from 1135.6 to 26.1 k\Omega. TFTs with smaller channel length (3 \mu m) have shown a highly negative turn-on voltage and hump in the subthreshold region, which can be attributed to short channel effects. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design, enabling an adequate selection of device dimensions to maximize the performance of different circuit building blocks assuring the multifunctionality demanded by system-on-panel concepts.
KW - Channel length scaling.
KW - IGZO TFTs
KW - Intrinsic voltage-gain
KW - Unity current-gain cutoff frequency
UR - http://www.scopus.com/inward/record.url?scp=84975226429&partnerID=8YFLogxK
U2 - 10.1109/JDT.2016.2550610
DO - 10.1109/JDT.2016.2550610
M3 - Article
AN - SCOPUS:84975226429
SN - 1551-319X
VL - 12
SP - 515
EP - 518
JO - Journal Of Display Technology
JF - Journal Of Display Technology
IS - 6
M1 - 7447659
ER -