Abstract
The preferential orientation of Ni-Ti thin films is a crucial factor in determining the shape memory behaviour. The texture has a strong influence on the extent of the strain recovery. The relationship between structure and deposition parameters is of extreme importance for future device applications. Our approach is in-situ x-ray diffraction during deposition carried out in a process chamber installed at a synchrotron radiation beamline. Near-equiatomic films were co-sputtered from Ni-Ti and Ti targets. Substrate type and bias voltage play an important role for the preferred orientation. On naturally oxidized Si(100) substrates the Ni-Ti B2 phase starts by stacking onto (hOO) planes and then changes to <110> fibre texture with increasing film thickness. For thermally oxidized Si(100) substrates, this cross-over is only observed when a substrate bias voltage is applied. The experiments were supplemented by ex-situ transmission electron microscopy and Auger electron spectroscopy allowing an additional deeper insight into the film/substrate interface.
Original language | English |
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Title of host publication | SMST-2006 |
Subtitle of host publication | Proceedings of the International Conference on Shape Memory and Superelastic Technologies |
Pages | 363-372 |
Number of pages | 10 |
DOIs | |
Publication status | Published - 2008 |
Event | International Conference on Shape Memory and Superelastic Technologies, SMST-2006 - Pacific Grove, CA, United States Duration: 7 May 2006 → 11 May 2006 |
Conference
Conference | International Conference on Shape Memory and Superelastic Technologies, SMST-2006 |
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Country/Territory | United States |
City | Pacific Grove, CA |
Period | 7/05/06 → 11/05/06 |
Keywords
- Shape-memory alloy
- Synchrotron-radiation scattering
- Deposition
- Texture
- Growth
- Silicon
- Mems