In situ characterization of β-Ga 2 O 3 flakes during proton irradiation is performed using ionoluminescence and electrical measurements. The quenching of the native blue-UV emission bands due to irradiation-induced defects in real time is monitored by ionoluminescence. Measurements of the I–V characteristics during irradiation present a good response of Ga 2 O 3 for particle detection and a good radiation resistance.
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 10 Oct 2018|
- β-Ga O