Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer

C. Nunes de Carvalho; J. M. M. de Nijs; Isabel  Ferreira; E. Fortunato; Rodrigo Ferrão de Paiva Martins

Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer

C. Nunes de Carvalho, J. M. M. de Nijs, Isabel Ferreira, E. Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Conference article › peer-review

Abstract

The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	426
Publication status	Published - 1 Dec 1996
Event	Symposium on Thin Films for Photovoltaic and Related Device Applications, at the 1996 MRS Spring Meeting - San Francisco, United States Duration: 8 Apr 1996 → 11 Apr 1996

Cite this

@article{1f47b292baf54477a77c1b10e44e3521,

title = "Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer",

abstract = "The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.",

author = "Carvalho, {C. Nunes de} and {de Nijs}, {J. M. M.} and Isabel Ferreira and E. Fortunato and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "1996",

month = dec,

day = "1",

language = "English",

volume = "426",

pages = "25--29",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "MRS - Materials Research Society",

note = "Symposium on Thin Films for Photovoltaic and Related Device Applications, at the 1996 MRS Spring Meeting ; Conference date: 08-04-1996 Through 11-04-1996",

}

TY - JOUR

T1 - Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer

AU - Carvalho, C. Nunes de

AU - de Nijs, J. M. M.

AU - Ferreira, Isabel

AU - Fortunato, E.

AU - Martins, Rodrigo Ferrão de Paiva

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

AB - The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

UR - http://www.scopus.com/inward/record.url?scp=0030380927&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030380927

SN - 0272-9172

VL - 426

SP - 25

EP - 29

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Symposium on Thin Films for Photovoltaic and Related Device Applications, at the 1996 MRS Spring Meeting

Y2 - 8 April 1996 through 11 April 1996

ER -

Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer

Abstract

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