The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.
|Number of pages||5|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 1996|
|Event||14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting - San Francisco, United States|
Duration: 8 Apr 1996 → 12 Apr 1996