Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer

C. Nunes de Carvalho; J. M. M. de Nijs; I. Ferreira; E. Fortunato; R. Martins

Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer

C. Nunes de Carvalho, J. M. M. de Nijs, I. Ferreira, E. Fortunato, R. Martins

Research output: Contribution to journal › Conference article › peer-review

Abstract

The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

Original language	English
Pages (from-to)	861-865
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	420
Publication status	Published - 1996
Event	14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting - San Francisco, United States Duration: 8 Apr 1996 → 12 Apr 1996

Cite this

@article{fd00b572fef0470c94df2a28b8789312,

title = "Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer",

abstract = "The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.",

author = "{Nunes de Carvalho}, C. and {de Nijs}, {J. M. M.} and I. Ferreira and E. Fortunato and R. Martins",

year = "1996",

language = "English",

volume = "420",

pages = "861--865",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "MRS - Materials Research Society",

note = "14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer

AU - Nunes de Carvalho, C.

AU - de Nijs, J. M. M.

AU - Ferreira, I.

AU - Fortunato, E.

AU - Martins, R.

PY - 1996

Y1 - 1996

N2 - The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

AB - The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

UR - http://www.scopus.com/inward/record.url?scp=0030407693&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030407693

SN - 0272-9172

VL - 420

SP - 861

EP - 865

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting

Y2 - 8 April 1996 through 12 April 1996

ER -

Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer

Abstract

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