Improvement of the ITO-p interface in a-Si: H solar cells using a thin SiO intermediate layer

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Abstract

The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

Original languageEnglish
Pages (from-to)861-865
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume420
Publication statusPublished - 1996
Event14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting - San Francisco, United States
Duration: 8 Apr 199612 Apr 1996

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