Improvement of a-Si: H device stability and performances by proper design of the interfaces

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75% and 16.3 mA cm-2, with a final efficiency of about 10%, before light soaking experiments.

Original languageEnglish
Pages (from-to)1094-1098
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 B
Publication statusPublished - 1 May 2000

Fingerprint Dive into the research topics of 'Improvement of a-Si: H device stability and performances by proper design of the interfaces'. Together they form a unique fingerprint.

Cite this