@article{fd269713c6554e7498136648ba577696,
title = "Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing",
abstract = "The influence of post-deposition thermal annealing on the thermoelectric properties of n- and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7 × 10− 5 to 4 × 10− 4 W/(m.K2) as the annealing temperature, under vacuum, increased up to 400 °C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and − 320 μV/K were achieved for p- and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 W.m− 1.K− 1) at room temperature.",
keywords = "Annealing, Chemical vapour deposition, nc-Si:H, Thermoelectric",
author = "Joana Loureiro and Tiago Mateus and Sergej Filonovich and Marisa Ferreira and Joana Figueira and Alexandra Rodrigues and Donovan, {Brian F.} and Hopkins, {Patrick E.} and Isabel Ferreira",
note = "This work is mainly funded by the NANOTEG Project, ENIAC/002/2010, and partially funded by TransFlexTeg-645241 project, H2020-ICT-2014-1 (RIA), and by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under the project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. The authors PEH and BFD appreciate support from the Air Force Office of Scientific Research (FA9550-15-1-0079).",
year = "2017",
month = nov,
day = "30",
doi = "10.1016/j.tsf.2017.09.047",
language = "English",
volume = "642",
pages = "276--280",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
}