Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing

Joana Loureiro, Tiago Mateus, Sergej Filonovich, Marisa Ferreira, Joana Figueira, Alexandra Rodrigues, Brian F. Donovan, Patrick E. Hopkins, Isabel Ferreira

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The influence of post-deposition thermal annealing on the thermoelectric properties of n- and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7 × 10− 5 to 4 × 10− 4 W/(m.K2) as the annealing temperature, under vacuum, increased up to 400 °C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and − 320 μV/K were achieved for p- and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 W.m− 1.K− 1) at room temperature.

Original languageEnglish
Pages (from-to)276-280
Number of pages5
JournalThin Solid Films
Volume642
DOIs
Publication statusPublished - 30 Nov 2017

Keywords

  • Annealing
  • Chemical vapour deposition
  • nc-Si:H
  • Thermoelectric

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