TY - JOUR
T1 - Improved Carrier-Based Modulation for the Single-Phase T-Type qZ Source Inverter
AU - Fernão Pires, Vitor
AU - Cordeiro, Armando
AU - Foito, Daniel
AU - Roncero-Clemente, Carlos
AU - Romero-Cadaval, Enrique
AU - Silva, José Fernando
N1 - info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50021%2F2020/PT#
info:eu-repo/grantAgreement/FCT/Concurso de avaliação no âmbito do Programa Plurianual de Financiamento de Unidades de I&D (2017%2F2018) - Financiamento Base/UIDB%2F00066%2F2020/PT#
Publisher Copyright:
© 2024 by the authors.
PY - 2024/3
Y1 - 2024/3
N2 - The Quasi-Impedance-Source Inverter (Quasi-Z inverter) is an interesting DC-AC converter topology that can be used in applications such as fuel cells and photovoltaic generators. This topology allows for both boost capability and DC-side continuous input current. Another very interesting feature is its reliability, as it limits the current when two switches on one leg are conducting simultaneously. This is due to an extra conduction state, specifically the shoot-through state. However, the shoot-through state also causes a loss of performance, increasing electromagnetic interference and harmonic distortion. To address these issues, this work proposes a modified carrier-based control method for the T-Type single-phase quasi-Z inverter. The modified carrier-based method introduces the use of two additional states to replace the standard shoot-through state. The additional states are called the upper shoot-through and the lower shoot-through. An approach to minimize the number of switches that change state during transitions will also be considered to reduce switching losses, improving the converter efficiency. The proposed modified carrier-based control strategy will be tested using computer simulations and laboratory experiments. From the obtained results, the theoretical considerations are confirmed. In fact, through the presented results, it is possible to understand important improvements that can be obtained in the THD of the output voltage and load current. In addition, it is also possible to verify that the modified carrier method also reduces the input current ripple.
AB - The Quasi-Impedance-Source Inverter (Quasi-Z inverter) is an interesting DC-AC converter topology that can be used in applications such as fuel cells and photovoltaic generators. This topology allows for both boost capability and DC-side continuous input current. Another very interesting feature is its reliability, as it limits the current when two switches on one leg are conducting simultaneously. This is due to an extra conduction state, specifically the shoot-through state. However, the shoot-through state also causes a loss of performance, increasing electromagnetic interference and harmonic distortion. To address these issues, this work proposes a modified carrier-based control method for the T-Type single-phase quasi-Z inverter. The modified carrier-based method introduces the use of two additional states to replace the standard shoot-through state. The additional states are called the upper shoot-through and the lower shoot-through. An approach to minimize the number of switches that change state during transitions will also be considered to reduce switching losses, improving the converter efficiency. The proposed modified carrier-based control strategy will be tested using computer simulations and laboratory experiments. From the obtained results, the theoretical considerations are confirmed. In fact, through the presented results, it is possible to understand important improvements that can be obtained in the THD of the output voltage and load current. In addition, it is also possible to verify that the modified carrier method also reduces the input current ripple.
KW - impedance-source converters
KW - multilevel T-type
KW - quasi-impedance-source inverter (qZS inverter)
KW - shoot through
UR - http://www.scopus.com/inward/record.url?scp=85188843575&partnerID=8YFLogxK
U2 - 10.3390/electronics13061113
DO - 10.3390/electronics13061113
M3 - Article
AN - SCOPUS:85188843575
SN - 2079-9292
VL - 13
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
IS - 6
M1 - 1113
ER -