Improved a-Si: H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics

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Abstract

In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalMRS Proceedings
Volume424
Publication statusPublished - 1996

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