Improved a-Si: H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics

G. Lavareda; E. Fortunato; C. Nunes Carvalho; R. Martins

Improved a-Si: H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics

G. Lavareda, E. Fortunato, C. Nunes Carvalho, R. Martins

CeFITec – Centro de Física e Investigação Tecnológica

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2 Citations (Scopus)

Abstract

In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, ε_r) of amorphous silicon nitride (a-Si_xN_1-x) and carbide (a-Si_xC_1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-Si_xN_1-x/a-Si_xC_1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

Original language	English
Pages (from-to)	59-64
Number of pages	6
Journal	MRS Proceedings
Volume	424
Publication status	Published - 1996

Cite this

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title = "Improved a-Si: H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics",

abstract = "In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.",

author = "G. Lavareda and E. Fortunato and Carvalho, {C. Nunes} and R. Martins",

year = "1996",

language = "English",

volume = "424",

pages = "59--64",

journal = "MRS Proceedings",

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TY - JOUR

T1 - Improved a-Si

T2 - H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics

AU - Lavareda, G.

AU - Fortunato, E.

AU - Carvalho, C. Nunes

AU - Martins, R.

PY - 1996

Y1 - 1996

N2 - In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

AB - In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

UR - http://www.scopus.com/inward/record.url?scp=0030399823&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030399823

VL - 424

SP - 59

EP - 64

JO - MRS Proceedings

JF - MRS Proceedings

ER -

Improved a-Si: H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics

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