TY - JOUR
T1 - Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques
AU - Ferreira, Isabel
AU - Fortunato, Elvira Maria Correia
AU - Vilarinho, P. M.
AU - Viana, Ana S.
AU - Alves, Eduardo
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2006/6/15
Y1 - 2006/6/15
N2 - Hydrogenated silicon carbon nitride (SiCN:H) thin film alloys were produced by hot wire (HWCVD), plasma assisted hot wire (PA-HWCVD) and plasma enhanced chemical vapor (PECVD) deposition techniques using a Ni buffer layer as catalyst for inducing crystallization. The silicon carbon nitride films were grown using C(2)H(4), SiH(4) and NH(3) gas mixtures and a deposition temperature of 300 degrees C. Prior to the deposition of the SiCN:H film a hydrogen etching of 10 min was performed in order to etch the catalyst material and to facilitate the crystallization. We report the influence of each deposition process on compositional, structural and morphological properties of the films. Scanning Electron Microscope-SEM and Atomic Force Measurement-AFM images show their morphology; the chemical composition was obtained by Rutherford Backscattering Spectrometry-RBS, Elastic Recoil Detection-ERD and the structure by Infrared-IR analysis. The thickness of the catalyst material determines the growth process and whether or not islands form. The production of micro-structured SiCN:H films is also dependent on the gas pressure, gas mixture and deposition process used.
AB - Hydrogenated silicon carbon nitride (SiCN:H) thin film alloys were produced by hot wire (HWCVD), plasma assisted hot wire (PA-HWCVD) and plasma enhanced chemical vapor (PECVD) deposition techniques using a Ni buffer layer as catalyst for inducing crystallization. The silicon carbon nitride films were grown using C(2)H(4), SiH(4) and NH(3) gas mixtures and a deposition temperature of 300 degrees C. Prior to the deposition of the SiCN:H film a hydrogen etching of 10 min was performed in order to etch the catalyst material and to facilitate the crystallization. We report the influence of each deposition process on compositional, structural and morphological properties of the films. Scanning Electron Microscope-SEM and Atomic Force Measurement-AFM images show their morphology; the chemical composition was obtained by Rutherford Backscattering Spectrometry-RBS, Elastic Recoil Detection-ERD and the structure by Infrared-IR analysis. The thickness of the catalyst material determines the growth process and whether or not islands form. The production of micro-structured SiCN:H films is also dependent on the gas pressure, gas mixture and deposition process used.
KW - FTIR measurements
KW - nitrogen-containing glass
KW - amorphous semiconductors
KW - composition
KW - films and coatings
U2 - 10.1016/j.jnoncrysol.2006.02.025
DO - 10.1016/j.jnoncrysol.2006.02.025
M3 - Article
VL - 352
SP - 1361
EP - 1366
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 9-20
ER -