Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors

H. Águas, Patrícia Nunes, E. Fortunato, Rui Jorge Cordeiro Silva, Vitor Silva, Joao Figueiredo, Fernando Soares, R. Martins

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/aSi:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ≈ 2% and a good sensitivity to the light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

Original languageEnglish
Pages (from-to)A2661-A2666
Number of pages6
JournalMRS Proceedings
Volume664
Publication statusPublished - 2001

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