Abstract
Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. The key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive component but also as active component, similar to what we observe in conventional semiconductors like silicon. In this paper we present the recent progress in n- and p-type oxide based thin film transistors (TFT) produced by rf magnetron sputtering and we will summarize the major milestones already achieved with this emerging and very promising technology.
| Original language | English |
|---|---|
| Title of host publication | 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 884-887 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479989553 |
| DOIs | |
| Publication status | Published - 5 Aug 2015 |
| Event | 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States Duration: 21 Jun 2015 → 25 Jun 2015 |
Conference
| Conference | 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 |
|---|---|
| Country/Territory | United States |
| City | Anchorage |
| Period | 21/06/15 → 25/06/15 |
Keywords
- Metal Oxide Thin Films
- Thin Film Transistors
- Transparent Electronics
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