Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films

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Abstract

We have produced amorphous intrinsic silicon thin films by hot-wire plasma assisted chemical vapor deposition, a process that combines the traditional rf plasma and the recent hot-wire techniques. In this work we have studied the influence of hydrogen gas dilution and rf power on the surface morphology, composition, structure and electro-optical properties of these films. The results show that by using this deposition technique it is possible to obtain at moderate rf power and filament temperature, compact i-type silicon films with ημτ of the order of 10 -5cm 2V -1, without hydrogen dilution.

Original languageEnglish
Pages (from-to)1644-1649
Number of pages6
JournalJournal Of Applied Physics
Volume91
Issue number3
DOIs
Publication statusPublished - 1 Feb 2002

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