TY - JOUR
T1 - Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
AU - Fortunato, Elvira Maria Correia
AU - Raniero, Leandro
AU - Silva, L.
AU - Gonçalves, Alexandra
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Barquinha, Pedro Miguel Cândido
AU - Aguas, Hugo
AU - Pereira, Luis Miguel Nunes
AU - Gonçalves, Gonçalo
AU - Ferreira, Isabel
AU - Elangovan, Elamurugu
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2008/12
Y1 - 2008/12
N2 - Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of ∼2.8×10−4 Ω cm was achieved for a film thickness of 1100 nm (sheet resistance ∼2.5 Ω/□), with a Hall mobility of 18 cm2/V s and a carrier concentration of 1.3×1021 cm−3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80% and 90% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed.
AB - Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of ∼2.8×10−4 Ω cm was achieved for a film thickness of 1100 nm (sheet resistance ∼2.5 Ω/□), with a Hall mobility of 18 cm2/V s and a carrier concentration of 1.3×1021 cm−3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80% and 90% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed.
KW - Transparent conducting oxides
KW - Radio-frequency sputtering
KW - Electrical properties
KW - X-ray diffraction
U2 - 10.1016/j.solmat.2008.07.009
DO - 10.1016/j.solmat.2008.07.009
M3 - Article
SN - 0927-0248
VL - 92
SP - 1605
EP - 1610
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 12
ER -
