Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Engineering & Materials Science

• Amorphous silicon 24%
• Boron 20%
• Crystallinity 21%
• Crystallization 19%
• Doping (additives) 19%
• Electric properties 19%
• Ellipsometry 30%
• Film growth 28%
• Gases 10%
• Nanocrystalline silicon 100%
• Optical band gaps 35%
• Optical properties 22%
• Plasma enhanced chemical vapor deposition 76%
• Plasmas 16%
• Silanes 68%
• Silicon 14%
• Silicon solar cells 24%
• Structural properties 19%
• Substrates 12%
• Temperature 7%
• Thin films 16%

Chemistry

• Amorphous Silicon 24%
• Application 5%
• Band Gap 13%
• Conductivity 11%
• Crystallinity 13%
• Crystallization 12%
• Doping Material 15%
• Electrical Property 15%
• Ellipsometry 19%
• Gas 9%
• Liquid Film 25%
• Mixture 23%
• Optical Property 13%
• Plasma 11%
• Pressure 31%
• Silane 51%
• Solar Cell 15%

Physics & Astronomy

• amorphous silicon 16%
• boron 15%
• conductivity 11%
• crystallinity 15%
• crystallization 13%
• electrical properties 13%
• ellipsometry 17%
• gases 9%
• optical properties 11%
• silanes 58%
• silicon 19%
• silicon films 57%
• solar cells 13%
• surface layers 15%
• temperature 5%
• thin films 9%