Abstract

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer.

Original languageEnglish
Pages (from-to)1253-1256
Number of pages4
JournalVacuum
Volume83
Issue number10
DOIs
Publication statusPublished - 16 Jun 2009

Fingerprint

Nanocrystalline silicon
Silanes
Plasma enhanced chemical vapor deposition
silicon films
silanes
Boron
Silicon solar cells
Optical band gaps
Ellipsometry
silicon
Silicon
Film growth
Crystallization
Amorphous silicon
ellipsometry
amorphous silicon
Structural properties
crystallinity
surface layers
boron

Keywords

  • Doping
  • nc-Si:H
  • PECVD
  • Structural properties
  • Trimethylboron

Cite this

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title = "Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure",
abstract = "In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer.",
keywords = "Doping, nc-Si:H, PECVD, Structural properties, Trimethylboron",
author = "Filonovich, {S. A.} and H. {\'A}guas and I. Bernacka-Wojcik and C. Gaspar and M. Vilarigues and Silva, {L. B.} and E. Fortunato and R. Martins",
year = "2009",
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doi = "10.1016/j.vacuum.2009.03.017",
language = "English",
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TY - JOUR

T1 - Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

AU - Filonovich, S. A.

AU - Águas, H.

AU - Bernacka-Wojcik, I.

AU - Gaspar, C.

AU - Vilarigues, M.

AU - Silva, L. B.

AU - Fortunato, E.

AU - Martins, R.

PY - 2009/6/16

Y1 - 2009/6/16

N2 - In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer.

AB - In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer.

KW - Doping

KW - nc-Si:H

KW - PECVD

KW - Structural properties

KW - Trimethylboron

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U2 - 10.1016/j.vacuum.2009.03.017

DO - 10.1016/j.vacuum.2009.03.017

M3 - Article

VL - 83

SP - 1253

EP - 1256

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 10

ER -