Abstract

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer.

Original languageEnglish
Pages (from-to)1253-1256
Number of pages4
JournalVacuum
Volume83
Issue number10
DOIs
Publication statusPublished - 16 Jun 2009

Keywords

  • Doping
  • nc-Si:H
  • PECVD
  • Structural properties
  • Trimethylboron

Fingerprint Dive into the research topics of 'Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure'. Together they form a unique fingerprint.

  • Cite this