TY - GEN
T1 - High speed operational amplifier using a-InGaZnO TFTs with negative capacitance
AU - Rodrigues, Ricardo
AU - Bahubalindruni, Pydi
AU - Barquinha, Pedro
N1 - Funding Information:
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2013/PT#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F122286%2F2016/PT#
info:eu-repo/grantAgreement/EC/H2020/716510/EU#
info:eu-repo/grantAgreement/EC/H2020/692373/EU#
This work is also supported by early career research grant with project ref. ECR/2017/000931 and IISER Bhopal.
Publisher Copyright:
© 2020 IEEE
PY - 2020
Y1 - 2020
N2 - This paper presents a novel high speed operational amplifier using a-IGZO TFTs for a given technology, without changing device structure, processing conditions and materials. In the proposed design, a negative capacitance generator (NCG) is employed, using a-IGZO TFTs, which is connected to the output of a positive feedback operational amplifier. This technique helps to move the output pole of the amplifier to very high frequency by reducing the overall equivalent capacitance (Ceq) at the output node, as the negative capacitance is in parallel with Ceq. By using this technique, the unity gain bandwidth (GB) of the opamp is increased from 486 kHz to 1.474 MHz without compromising other performance metrics, such as, gain and stability (phase margin). However power consumption is increased from 0.3 mW to 0.6 mW, when the simulations took place with in-house IGZO TFT models. Both NCG and the amplifier were designed with a minimum feature size of 10 µm and a power supply of 10 V and 15 V, respectively.
AB - This paper presents a novel high speed operational amplifier using a-IGZO TFTs for a given technology, without changing device structure, processing conditions and materials. In the proposed design, a negative capacitance generator (NCG) is employed, using a-IGZO TFTs, which is connected to the output of a positive feedback operational amplifier. This technique helps to move the output pole of the amplifier to very high frequency by reducing the overall equivalent capacitance (Ceq) at the output node, as the negative capacitance is in parallel with Ceq. By using this technique, the unity gain bandwidth (GB) of the opamp is increased from 486 kHz to 1.474 MHz without compromising other performance metrics, such as, gain and stability (phase margin). However power consumption is increased from 0.3 mW to 0.6 mW, when the simulations took place with in-house IGZO TFT models. Both NCG and the amplifier were designed with a minimum feature size of 10 µm and a power supply of 10 V and 15 V, respectively.
KW - A-IGZO TFT
KW - Bandwidth enhancement
KW - Negative capacitance
KW - Positive feedback amplifier
UR - http://www.scopus.com/inward/record.url?scp=85108997358&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85108997358
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers (IEEE)
T2 - 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
Y2 - 10 October 2020 through 21 October 2020
ER -