High sensitivity photochemical sensors based on amorphous silicon

E. Fortunato, A. Malik, A. Seco, A. Macarico, R. Martins

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

Original languageEnglish
Pages (from-to)949-954
Number of pages6
JournalMRS Proceedings
Volume467
Publication statusPublished - 1997

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