High quality conductive gallium-doped zinc oxide films deposited at room temperature

Elvira Maria Correia Fortunato; V. Assunção; Alexandra Gonçalves; A. Marques; Hugo Aguas; Luis Miguel Nunes Pereira; Isabel  Ferreira; P. Vilarinho; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.tsf.2003.10.139

High quality conductive gallium-doped zinc oxide films deposited at room temperature

Elvira Maria Correia Fortunato, V. Assunção, Alexandra Gonçalves, A. Marques, Hugo Aguas, Luis Miguel Nunes Pereira, Isabel Ferreira, P. Vilarinho, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

115 Citations (Scopus)

Abstract

Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by if sputtering at room temperature. The lowest resistivity achieved was 2.6 X 10(-4) Omega cm for a thickness of 1100 nm (sheet resistance approximate to 1.6 Omega /sq), with a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3). The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2. which is very close to the value reported for bulk material.

Original language	English
Pages (from-to)	443-447
Number of pages	5
Journal	Thin Solid Films
Volume	451-452
Issue number	NA
DOIs	https://doi.org/10.1016/j.tsf.2003.10.139
Publication status	Published - 1 Jan 2004

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10.1016/j.tsf.2003.10.139

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title = "High quality conductive gallium-doped zinc oxide films deposited at room temperature",

abstract = "Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by if sputtering at room temperature. The lowest resistivity achieved was 2.6 X 10(-4) Omega cm for a thickness of 1100 nm (sheet resistance approximate to 1.6 Omega /sq), with a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3). The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2. which is very close to the value reported for bulk material.",

keywords = "zinc oxide, gallium, thin film, rf magnetron sputtering, transparent conductive oxide",

author = "Fortunato, {Elvira Maria Correia} and V. Assun{\c c}{\~a}o and Alexandra Gon{\c c}alves and A. Marques and Hugo Aguas and Pereira, {Luis Miguel Nunes} and Isabel Ferreira and P. Vilarinho and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

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doi = "10.1016/j.tsf.2003.10.139",

language = "English",

volume = "451-452",

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TY - JOUR

T1 - High quality conductive gallium-doped zinc oxide films deposited at room temperature

AU - Fortunato, Elvira Maria Correia

AU - Assunção, V.

AU - Gonçalves, Alexandra

AU - Marques, A.

AU - Aguas, Hugo

AU - Pereira, Luis Miguel Nunes

AU - Ferreira, Isabel

AU - Vilarinho, P.

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by if sputtering at room temperature. The lowest resistivity achieved was 2.6 X 10(-4) Omega cm for a thickness of 1100 nm (sheet resistance approximate to 1.6 Omega /sq), with a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3). The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2. which is very close to the value reported for bulk material.

AB - Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by if sputtering at room temperature. The lowest resistivity achieved was 2.6 X 10(-4) Omega cm for a thickness of 1100 nm (sheet resistance approximate to 1.6 Omega /sq), with a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3). The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2. which is very close to the value reported for bulk material.

KW - zinc oxide

KW - gallium

KW - thin film

KW - rf magnetron sputtering

KW - transparent conductive oxide

U2 - 10.1016/j.tsf.2003.10.139

DO - 10.1016/j.tsf.2003.10.139

M3 - Article

SN - 0040-6090

VL - 451-452

SP - 443

EP - 447

JO - Thin Solid Films

JF - Thin Solid Films

IS - NA

ER -

High quality conductive gallium-doped zinc oxide films deposited at room temperature

Abstract

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