TY - JOUR
T1 - High quality a-Si:H films for MIS device applications
AU - Águas, Hugo Manuel Brito
AU - Fortunato, Elvira Maria Correia
AU - Silva, Vitor
AU - Pereira, Luis Miguel Nunes
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2002/2/1
Y1 - 2002/2/1
N2 - This work presents the I-V results of a-Si:H/SiOx/Pd MIS (metal-insulator-semiconductor) structures. The a-Si:H was deposited by non-conventional modified triode PECVD. This new configuration allows the deposition of high quality a-Si:H with a photosensitivity of 106, indicating the presence of low density of defects. Spectroscopic ellipsometry measurements revealed that these films are highly dense and present a very smooth surface so allowing a low defect interface between the Pd and the a-Si:H. As a result, we could make MIS photodiodes with barrier heights of 1.17 eV, which give a high reduction of the reverse dark current, an increase of the signal to noise ratio of 106 and an open circuit voltage VOC=0.5 V
AB - This work presents the I-V results of a-Si:H/SiOx/Pd MIS (metal-insulator-semiconductor) structures. The a-Si:H was deposited by non-conventional modified triode PECVD. This new configuration allows the deposition of high quality a-Si:H with a photosensitivity of 106, indicating the presence of low density of defects. Spectroscopic ellipsometry measurements revealed that these films are highly dense and present a very smooth surface so allowing a low defect interface between the Pd and the a-Si:H. As a result, we could make MIS photodiodes with barrier heights of 1.17 eV, which give a high reduction of the reverse dark current, an increase of the signal to noise ratio of 106 and an open circuit voltage VOC=0.5 V
U2 - 10.1016/S0040-6090(01)01655-8
DO - 10.1016/S0040-6090(01)01655-8
M3 - Article
SN - 0040-6090
VL - 403
SP - 26
EP - 29
JO - Thin Solid Films
JF - Thin Solid Films
IS - NA
ER -