High quality a-Si:H films for MIS device applications

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10 Citations (Scopus)

Abstract

This work presents the I-V results of a-Si:H/SiOx/Pd MIS (metal-insulator-semiconductor) structures. The a-Si:H was deposited by non-conventional modified triode PECVD. This new configuration allows the deposition of high quality a-Si:H with a photosensitivity of 106, indicating the presence of low density of defects. Spectroscopic ellipsometry measurements revealed that these films are highly dense and present a very smooth surface so allowing a low defect interface between the Pd and the a-Si:H. As a result, we could make MIS photodiodes with barrier heights of 1.17 eV, which give a high reduction of the reverse dark current, an increase of the signal to noise ratio of 106 and an open circuit voltage VOC=0.5 V
Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalThin Solid Films
Volume403
Issue numberNA
DOIs
Publication statusPublished - 1 Feb 2002

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