High mobility nanocrystalline indium zinc oxide deposited at room temperature

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2 Citations (Scopus)

Abstract

In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.
Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages437-442
Number of pages6
Volume811
DOIs
Publication statusPublished - 1 Jan 2004
EventSymposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting -
Duration: 1 Jan 2004 → …

Conference

ConferenceSymposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting
Period1/01/04 → …

Keywords

  • Deposition
  • Doping (additives)
  • Electric conductivity
  • Electron mobility
  • Light transmission
  • Magnetron sputtering
  • Nanostructured materials
  • Optoelectronic devices
  • Scanning electron microscopy
  • X ray diffraction analysis
  • Indium zinc oxide (IZO)
  • RF magnetron sputtering
  • Room temperature
  • Transparent conducting oxides (TCO)
  • Indium compounds

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