Abstract
In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.
Original language | English |
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Title of host publication | Materials Research Society Symposium Proceedings |
Pages | 437-442 |
Number of pages | 6 |
Volume | 811 |
DOIs | |
Publication status | Published - 1 Jan 2004 |
Event | Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting - Duration: 1 Jan 2004 → … |
Conference
Conference | Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting |
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Period | 1/01/04 → … |
Keywords
- Deposition
- Doping (additives)
- Electric conductivity
- Electron mobility
- Light transmission
- Magnetron sputtering
- Nanostructured materials
- Optoelectronic devices
- Scanning electron microscopy
- X ray diffraction analysis
- Indium zinc oxide (IZO)
- RF magnetron sputtering
- Room temperature
- Transparent conducting oxides (TCO)
- Indium compounds