High mobility nanocrystalline indium zinc oxide deposited at room temperature

Elvira Maria Correia Fortunato; Ana Cláudia Madeira Botas Gomes Pimentel; Alexandra Gonçalves; A Marques; Rodrigo Ferrão de Paiva Martins

doi:10.1557/PROC-811-E3.9

High mobility nanocrystalline indium zinc oxide deposited at room temperature

Elvira Maria Correia Fortunato, Ana Cláudia Madeira Botas Gomes Pimentel, Alexandra Gonçalves, A Marques, Rodrigo Ferrão de Paiva Martins

DCM - Departamento de Ciência dos Materiais

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	437-442
Number of pages	6
Volume	811
DOIs	https://doi.org/10.1557/PROC-811-E3.9
Publication status	Published - 1 Jan 2004
Event	Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting - Duration: 1 Jan 2004 → …

Conference

Conference	Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting
Period	1/01/04 → …

Keywords

Deposition
Doping (additives)
Electric conductivity
Electron mobility
Light transmission
Magnetron sputtering
Nanostructured materials
Optoelectronic devices
Scanning electron microscopy
X ray diffraction analysis
Indium zinc oxide (IZO)
RF magnetron sputtering
Room temperature
Transparent conducting oxides (TCO)
Indium compounds

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10.1557/PROC-811-E3.9

Cite this

@inproceedings{9085c3a9c2a34e13897a0abaf4d0b19b,

title = "High mobility nanocrystalline indium zinc oxide deposited at room temperature",

abstract = "In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.",

keywords = "SPUTTERING PARAMETERS, PULSED-LASER DEPOSITION, TRANSPARENT, THIN-FILMS, Deposition, Doping (additives), Electric conductivity, Electron mobility, Light transmission, Magnetron sputtering, Nanostructured materials, Optoelectronic devices, Scanning electron microscopy, X ray diffraction analysis, Indium zinc oxide (IZO), RF magnetron sputtering, Room temperature, Transparent conducting oxides (TCO), Indium compounds",

author = "Fortunato, {Elvira Maria Correia} and Pimentel, {Ana Cl{\'a}udia Madeira Botas Gomes} and Alexandra Gon{\c c}alves and A Marques and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

month = jan,

day = "1",

doi = "10.1557/PROC-811-E3.9",

language = "English",

volume = "811",

pages = "437--442",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting ; Conference date: 01-01-2004",

}

Fortunato, EMC , Pimentel, ACMBG , Gonçalves, A, Marques, A & Martins, RFDP 2004, High mobility nanocrystalline indium zinc oxide deposited at room temperature. in Materials Research Society Symposium Proceedings. vol. 811, pp. 437-442, Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting, 1/01/04. https://doi.org/10.1557/PROC-811-E3.9

High mobility nanocrystalline indium zinc oxide deposited at room temperature. / Fortunato, Elvira Maria Correia ; Pimentel, Ana Cláudia Madeira Botas Gomes ; Gonçalves, Alexandra; Marques, A; Martins, Rodrigo Ferrão de Paiva.

Materials Research Society Symposium Proceedings. Vol. 811 2004. p. 437-442.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High mobility nanocrystalline indium zinc oxide deposited at room temperature

AU - Fortunato, Elvira Maria Correia

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Gonçalves, Alexandra

AU - Marques, A

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/1/1

Y1 - 2004/1/1

N2 - In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.

AB - In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.

KW - SPUTTERING PARAMETERS

KW - PULSED-LASER DEPOSITION

KW - TRANSPARENT

KW - THIN-FILMS

KW - Deposition

KW - Doping (additives)

KW - Electric conductivity

KW - Electron mobility

KW - Light transmission

KW - Magnetron sputtering

KW - Nanostructured materials

KW - Optoelectronic devices

KW - Scanning electron microscopy

KW - X ray diffraction analysis

KW - Indium zinc oxide (IZO)

KW - RF magnetron sputtering

KW - Room temperature

KW - Transparent conducting oxides (TCO)

KW - Indium compounds

U2 - 10.1557/PROC-811-E3.9

DO - 10.1557/PROC-811-E3.9

M3 - Conference contribution

VL - 811

SP - 437

EP - 442

BT - Materials Research Society Symposium Proceedings

T2 - Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting

Y2 - 1 January 2004

ER -

High mobility nanocrystalline indium zinc oxide deposited at room temperature

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Keywords

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