High mobility indium free amorphous oxide thin film transistors

Elvira M.C. Fortunato, Luís M.N. Pereira, Pedro M.C. Barquinha, Ana M. Botelho Do Rego, Goņalo Goņalves, Anna Vil̀, Juan R. Morante, Rodrigo F.P. Martins

Research output: Contribution to journalArticle

197 Citations (Scopus)

Abstract

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of postannealing temperatures (200, 250, and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature (S1) and 150 °C (S2) during the channel deposition. From the results, it was observed that the effect of postannealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs (WL=5050 μm) operate in the enhancement mode (n -type), present a high saturation mobility of 24.6 cm2 V s, a subthreshold gate swing voltage of 0.38 V /decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V, and an Ion Ioff ratio of 8× 107, satisfying all the requirements to be used as active-matrix backplane.

Original languageEnglish
Article number222103
JournalAPPLIED PHYSICS LETTERS
Volume92
Issue number22
DOIs
Publication statusPublished - 13 Jun 2008

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