TY - JOUR
T1 - High mobility indium free amorphous oxide thin film transistors
AU - Fortunato, Elvira M.C.
AU - Pereira, Luís M.N.
AU - Barquinha, Pedro M.C.
AU - Botelho Do Rego, Ana M.
AU - Goņalves, Goņalo
AU - Vil̀, Anna
AU - Morante, Juan R.
AU - Martins, Rodrigo F.P.
PY - 2008/6/13
Y1 - 2008/6/13
N2 - High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of postannealing temperatures (200, 250, and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature (S1) and 150 °C (S2) during the channel deposition. From the results, it was observed that the effect of postannealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs (WL=5050 μm) operate in the enhancement mode (n -type), present a high saturation mobility of 24.6 cm2 V s, a subthreshold gate swing voltage of 0.38 V /decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V, and an Ion Ioff ratio of 8× 107, satisfying all the requirements to be used as active-matrix backplane.
AB - High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of postannealing temperatures (200, 250, and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature (S1) and 150 °C (S2) during the channel deposition. From the results, it was observed that the effect of postannealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs (WL=5050 μm) operate in the enhancement mode (n -type), present a high saturation mobility of 24.6 cm2 V s, a subthreshold gate swing voltage of 0.38 V /decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V, and an Ion Ioff ratio of 8× 107, satisfying all the requirements to be used as active-matrix backplane.
UR - http://www.scopus.com/inward/record.url?scp=44849134063&partnerID=8YFLogxK
U2 - 10.1063/1.2937473
DO - 10.1063/1.2937473
M3 - Article
AN - SCOPUS:44849134063
SN - 0003-6951
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 22
M1 - 222103
ER -