High mobility indium free amorphous oxide based thin film transistors

E. Fortunato; L. Pereira; P. Barquinha; A. Botelho Do Rego; G Gonçalves; A. Vilà; J. Morante; Rodrigo Ferrão de Paiva Martins

High mobility indium free amorphous oxide based thin film transistors

E. Fortunato, L. Pereira, P. Barquinha, A. Botelho Do Rego, G Gonçalves, A. Vilà, J. Morante, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm²/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an I_ON/I_OFF ratio of 8x10⁷, satisfying all the requirements to be used in active-matrix backplane.

Original language	English
Pages	1199-1202
Number of pages	4
Publication status	Published - 2008

Keywords

Oxide semiconductors
Rf magnetron sputtering
TFTs

Cite this

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title = "High mobility indium free amorphous oxide based thin film transistors",

abstract = "High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm2/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an ION/IOFF ratio of 8x107, satisfying all the requirements to be used in active-matrix backplane.",

keywords = "Oxide semiconductors, Rf magnetron sputtering, TFTs",

author = "E. Fortunato and L. Pereira and P. Barquinha and {Botelho Do Rego}, A. and G Gon{\c c}alves and A. Vil{\`a} and J. Morante and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2008",

language = "English",

pages = "1199--1202",

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TY - CONF

T1 - High mobility indium free amorphous oxide based thin film transistors

AU - Fortunato, E.

AU - Pereira, L.

AU - Barquinha, P.

AU - Botelho Do Rego, A.

AU - Gonçalves, G

AU - Vilà, A.

AU - Morante, J.

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2008

Y1 - 2008

N2 - High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm2/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an ION/IOFF ratio of 8x107, satisfying all the requirements to be used in active-matrix backplane.

AB - High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm2/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an ION/IOFF ratio of 8x107, satisfying all the requirements to be used in active-matrix backplane.

KW - Oxide semiconductors

KW - Rf magnetron sputtering

KW - TFTs

UR - http://www.scopus.com/inward/record.url?scp=65649108570&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:65649108570

SP - 1199

EP - 1202

ER -

High mobility indium free amorphous oxide based thin film transistors

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